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APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

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Part Number : APT45GP120B2DQ2G

Manufacturer : Microsemi Corporation

Description : IGBT 1200V 113A 625W TMAX

Category : Transistors - IGBTs - Single

Family : Transistors - IGBTs - Single

Series : POWER MOS 7®

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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Part Status	Active
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	113A
Current - Collector Pulsed (Icm)	170A
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 45A
Power - Max	625W
Switching Energy	900µJ (on), 905µJ (off)
Input Type	Standard
Gate Charge	185nC
Td (on/off) @ 25°C	18ns/100ns
Test Condition	600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

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