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Part Number : IPI65R099C6XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 38A TO-262
Category : Transistors - FETs, MOSFETs - Single
Family : Transistors - FETs, MOSFETs - Single
Series : CoolMOS™
Place of Origin : Original
MOQ : Negotiable
Price : Negotiable
Delivery Time : Negotiable
Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 100000
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | 127nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 278W (Tc) |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 12.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
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IPI65R099C6XKSA1 Field Effect Transistor Transistors FETs MOSFETs Single Images |