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SIHG33N65EF-GE3 Field Effect Transistor Transistors FETs MOSFETs Single

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SIHG33N65EF-GE3 Field Effect Transistor Transistors FETs MOSFETs Single

Part Number : SIHG33N65EF-GE3

Manufacturer : Vishay Siliconix

Description : MOSFET N-CH 650V 31.6A TO-247AC

Category : Transistors - FETs, MOSFETs - Single

Family : Transistors - FETs, MOSFETs - Single

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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SIHG33N65EF-GE3 Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 31.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 171nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4026pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 313W (Tc)
Rds On (Max) @ Id, Vgs 109 mOhm @ 16.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

SIHG33N65EF-GE3 Packaging

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SIHG33N65EF-GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSIHG33N65EF-GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSIHG33N65EF-GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSIHG33N65EF-GE3 Field Effect Transistor Transistors FETs MOSFETs Single


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